Abstract. In this work we discuss 3D selfconsistent solution of Poisson and Schrödinger equations for electrostatically formed quantum dot. 3D simulations give detailed insight into the energy spectrum of the device and allow us to find values of respective voltages ensuring given number of electrons in the dot. We performed calculations for fully 3D potential and apart from that calculations for the same potential separated into two independent parts, i.e. regarding to the plane of 2DEG and to the direction perpendicular to the meant plane. We found that calculations done for the two independent parts of the potential give good information about quantum dot properties and they are much faster compared to fully 3D simulations
In this work we implement the self-consistent Thomas-Fermi-Poisson approach to a homogeneous two-dim...
In this study, we have calculated energy levels of an N-electron quantum dot. For this purpose, we h...
In this paper we present a simulation approach for electron transport in single-electron devices bas...
We are utilizing the Recursive Green’s function method to calculate the conductance in quantum dots ...
We present a numerical solution of the Poisson-Schrodinger problem for a semiconductor nanostructure...
We calculated the total energy of a semiconductor quantum dot formed in gate and etching defined dev...
International audienceThe self-consistent quantum-electrostatic (also known as Poisson-Schrödinger) ...
AbstractThe electronic properties of a three-dimensional quantum dot array model formed by verticall...
Electronic-structure calculations play a fundamental role in predicting important physical (optical,...
The time-independent Schrödinger equation is solved using the finite element method (FEM) and the fi...
Local estimates to the two-dimensional electron–electron electrostatics, i.e., Hartree energy, are o...
Abstract. We present a simulator for calculating, in a consistent manner, the realistic electronic s...
In this study, we develop and demonstrate an efficient self-consistent calculation schema that compu...
Qubits for quantum computer applications can be based on many different types of architectures and...
In this study, we have calculated the subband energy level, potential profile, and the corresponding...
In this work we implement the self-consistent Thomas-Fermi-Poisson approach to a homogeneous two-dim...
In this study, we have calculated energy levels of an N-electron quantum dot. For this purpose, we h...
In this paper we present a simulation approach for electron transport in single-electron devices bas...
We are utilizing the Recursive Green’s function method to calculate the conductance in quantum dots ...
We present a numerical solution of the Poisson-Schrodinger problem for a semiconductor nanostructure...
We calculated the total energy of a semiconductor quantum dot formed in gate and etching defined dev...
International audienceThe self-consistent quantum-electrostatic (also known as Poisson-Schrödinger) ...
AbstractThe electronic properties of a three-dimensional quantum dot array model formed by verticall...
Electronic-structure calculations play a fundamental role in predicting important physical (optical,...
The time-independent Schrödinger equation is solved using the finite element method (FEM) and the fi...
Local estimates to the two-dimensional electron–electron electrostatics, i.e., Hartree energy, are o...
Abstract. We present a simulator for calculating, in a consistent manner, the realistic electronic s...
In this study, we develop and demonstrate an efficient self-consistent calculation schema that compu...
Qubits for quantum computer applications can be based on many different types of architectures and...
In this study, we have calculated the subband energy level, potential profile, and the corresponding...
In this work we implement the self-consistent Thomas-Fermi-Poisson approach to a homogeneous two-dim...
In this study, we have calculated energy levels of an N-electron quantum dot. For this purpose, we h...
In this paper we present a simulation approach for electron transport in single-electron devices bas...