I-V and C-V methods to extract Al/polysilicon Schottky diode parameters

Abstract: Series resistance, ideality factors, saturation currents and doping concentrations have been determined using I-V and C-V techniques. However, the usual equations cannot fit some diodes, may be because they are too approximated or because other mechanisms are present. In this work we use two methods based on C-V and I-V measurements to extract Schottky diode parameters. These methods are very easy to use and give results with more precision even when characteristics behavior is far from ideal. The influence of the material (polysilicon) hase also been investigated