LPCVD SYNTHESIS FROM SILANE OF SILICON NANODOTS FOR FLASH MEMORY DEVICES

The increase of microelectronic device potentialities essentially derives from the reduction of feature size down to the nanometer scale. Multi-nanocrystals memories are one illustration of this trend. A multi-field study is reported, aiming to better understand phenomena involved in silicon nanocrystals elaboration. A first objective is to better control the density and the size of silicon nanocrystals formed during Low Pressure Chemical Vapor Deposition (LPCVD). Some experimental results will be presented, aiming a reliable estimation of densities and sizes of nanocrystals using several techniques: ellipsometry measurements, SEM and TEM image analysis