Pd/In-based Ohmic Contacts to n-GaAs

Abstract — The contribution deals with the performance of doping element/Pd/In contact structures on n+-GaAs wafers where Ge, Sn or Si were employed as doping elements. The contact structures were deposited by high vacuum evaporation. Ohmic behaviour of the structures was achieved either by rapid thermal annealing (RTA) or by laser annealing by YAG:Nd power laser. Electrical properties were measured by four-point modified method. In addition the influence of absorbing cap layer was studied. I