Influence of Implantation Process Mode and Reactivity of the Implanted Ions on the Surface Properties of Insulators

Abstract – Analysis of experimental output of the various ions exposure to the surface properties of inorganic dielectric materials was carried out. It is shown that the ion-thermal modification of all in-vestigated materials leads to the dramatically de-crease of their sheet resistance. Properties of the modified layer are defined by the radiation defect formed during the implantation and by the chemi-cal activity of alloying elements. The significant changes of the electrophysical properties of surface are realized by ion modification with weight ele-ments (Li, C). Increase of ion mass (Al, Fe, Mo, W) make worse efficacy of modification. Maximum change of electrophysical properties of the dielec-trics surface are reached by the ion-beam mixing. The resistance of modified layer can be controlled within 1