Pacemaker is an electronic biomedical device which stimulates and regulates or amplify the human heartbeat by delivering weak electrical pulses to the cardiac muscle at regular intervals when its natural regulating mechanisms break down. The purpose of the present work is to introduce a kind of low power Betavoltaic battery using in nuclear powered cardiac pacemakers which have higher efficiency than those available with previous devices. In this design, two p-n diode structures from GaN semiconductor were used to collect the charge from a layer of 63Ni as a source which is centered between the two p-n junctions. MCNP simulation results have been used to determine the amount of electron current from interaction of beta particles in p-n junc...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
It was developed the technology of manufacturing planar betavoltaic converter based on silicon, prov...
International audienceGaN is a durable, radiation hard and wide-bandgap semiconductor material, maki...
International audienceGaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for...
GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown...
The wide-bandgap semiconductors, which have the advantages of radiation resistance and high carrier ...
abstract: Pacemakers in the early 1970s were powered by betavoltaic devices which provided long last...
National Natural Science Foundation of China [51075344, 61274120]; Science and Technology Project of...
The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the curren...
A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-c...
This paper presents a simulation model to predict the performance of GaAs-based betavoltaic batterie...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
It was developed the technology of manufacturing planar betavoltaic converter based on silicon, prov...
International audienceGaN is a durable, radiation hard and wide-bandgap semiconductor material, maki...
International audienceGaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for...
GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown...
The wide-bandgap semiconductors, which have the advantages of radiation resistance and high carrier ...
abstract: Pacemakers in the early 1970s were powered by betavoltaic devices which provided long last...
National Natural Science Foundation of China [51075344, 61274120]; Science and Technology Project of...
The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the curren...
A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-c...
This paper presents a simulation model to predict the performance of GaAs-based betavoltaic batterie...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
It was developed the technology of manufacturing planar betavoltaic converter based on silicon, prov...