Novel Soft-Punch-Through (SPT) 1700V IGBT Sets Benchmark on Technology Curve

Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT) IGBT range, ABB Semiconductors introduces the 1700V SPT IGBT line-up. In this paper, we demonstrate that the new 1700V SPT IGBT achieves the same desirable characteristics as the successful 1200V SPT generation. The results presented here show that despite the low on-state and switching losses of 1700V SPT IGBT, high levels of short circuit withstand capability and switching ruggedness have been realized. In addition, the unique Soft-Punch-Through structure achieves low levels of EMI. In parallel to the 1700V SPT IGBT, a new fast and soft recovery 1700V diode has been developed with very low reverse recovery losses and high ruggedness under all operating conditions. Both the 1700V IGBT and diode exhibit positive temperature coefficients for the forward voltage drop at nominal currents, making them ideally suited for safe parallel operation in high current modules. The new chip set will be introduced in the standard LoPak module range