ABSTRACT: Schottky barriers of the type Au/polypyrrole/Al (or In) were made in sand-wich configuration. The conductivity of polypyrrole was tuned to be on the order of 1023 ohm21 cm21 by its electrodeposition from a novel ambient temperature ternary eutectic melt consisting of acetamide, urea, and ammonium nitrate. The rectification charac-teristics were obtained from the current–voltage and capacitance–voltage measure-ments at room temperature. The analysis of data using thermionic emission theory gave improved values for the junction parameters of ideality factor, reverse saturation current, rectification ratio, and barrier potential when compared to the previously reported values for this polymer. Between Al and In metals used for the ju...
Junctions between a single layer of Poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene] and aluminium...
Conducting polypyrrole films were electrochemically prepared from aqueous solution containing sodium...
In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating o...
Junction properties between conducting polymer composites of polypyrrole/polyindene (PPy/PIn) with d...
In recent years there has been a growing interest in the use of molecular organic materials in micro...
A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier ...
Electronic properties of junctions fabricated by polyamide-polypyrrole composite films polymerized w...
We present the results of a study of strong rectification by metal-polymer (Schottky) diodes made by...
ABSTRACT: Junctions between a single layer of Poly[3-(2”,5”-diheptyloxyphenyl)-2,2’-bithiophene] and...
Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electr...
Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky...
Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricat...
This thesis investigates the use of thin resistive metal electrodes in the formation of Schottky bar...
Doping dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out o...
WOS:000288696900011In this work, pyrrole-aniline copolymer/p-Si structure has been fabricated by for...
Junctions between a single layer of Poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene] and aluminium...
Conducting polypyrrole films were electrochemically prepared from aqueous solution containing sodium...
In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating o...
Junction properties between conducting polymer composites of polypyrrole/polyindene (PPy/PIn) with d...
In recent years there has been a growing interest in the use of molecular organic materials in micro...
A detailed investigation both of the DC and of the AC electrical properties of the Schottky barrier ...
Electronic properties of junctions fabricated by polyamide-polypyrrole composite films polymerized w...
We present the results of a study of strong rectification by metal-polymer (Schottky) diodes made by...
ABSTRACT: Junctions between a single layer of Poly[3-(2”,5”-diheptyloxyphenyl)-2,2’-bithiophene] and...
Schottky barrier diodes based on Al/poly(3-methylthiophene)/Au have been fabricated and their electr...
Schottky barrier diodes are made from virtually all semiconducting polymers. Application of Schottky...
Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricat...
This thesis investigates the use of thin resistive metal electrodes in the formation of Schottky bar...
Doping dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out o...
WOS:000288696900011In this work, pyrrole-aniline copolymer/p-Si structure has been fabricated by for...
Junctions between a single layer of Poly[3-(2”,5”-diheptyloxyphenyl)-2,2'-bithiophene] and aluminium...
Conducting polypyrrole films were electrochemically prepared from aqueous solution containing sodium...
In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating o...