Add to ORKGAbstract – The first vertical fully-depleted “silicon-on-nothing ” field-effect transistor (SONFET) device with a channel length less than 30nm is introduced. The key idea is the determination of transistor channel length as well as depletion width by means of well defined epitaxial growth. To obtain the transistor channel a sacrificial layer made from silicon germanium (Si1-xGex) and the selective wet-chemical removal of this layer is used. In a first step this sacrificial layer, grown under biaxial compression by means of CVD, is used for physical channel length definition and to introduce uniaxial strain to intrinsic silicon channel grown afterwards by means of CVD. The thickness of this intrinsic layer defines the channel depletion widt...
Strained Ge channels on SiGe strain relaxed buffer are grown selectively in active areas surrounded ...
A vertical channel flash memory cell with a silicon germanium layer in the channel region provides e...
Characterization and Optimization of Selectively Grown Vertical Si-MOS Transistors The subject of th...
Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitax...
A novel vertical MOSFET concept using selective epitaxial growth by low pressure chemical vapor depo...
We present raised source/drain MOSFET devices with channel lengths down to 50nm. The raised source/d...
We present raised source/drain MOSFET devices with channel lengths down to 50 nm. The raised source/...
The development in microelectronics leads to smaller devices, which requires the definition of small...
textFor over three decades, the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has succ...
An ultrathin vertical channel (UTVC) MOSFET with an asymmetric gate-overlapped low-doped drain (LDD)...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
Two trench-gated power MOSFETs using strained SiGe channel are proposed to further reduce specific o...
The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circui...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
Planar MOS-field-effect transistors are common devices today used by the computer industry. When the...
Strained Ge channels on SiGe strain relaxed buffer are grown selectively in active areas surrounded ...
A vertical channel flash memory cell with a silicon germanium layer in the channel region provides e...
Characterization and Optimization of Selectively Grown Vertical Si-MOS Transistors The subject of th...
Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitax...
A novel vertical MOSFET concept using selective epitaxial growth by low pressure chemical vapor depo...
We present raised source/drain MOSFET devices with channel lengths down to 50nm. The raised source/d...
We present raised source/drain MOSFET devices with channel lengths down to 50 nm. The raised source/...
The development in microelectronics leads to smaller devices, which requires the definition of small...
textFor over three decades, the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has succ...
An ultrathin vertical channel (UTVC) MOSFET with an asymmetric gate-overlapped low-doped drain (LDD)...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
Two trench-gated power MOSFETs using strained SiGe channel are proposed to further reduce specific o...
The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circui...
The channel lengths of the top contact organic thin film transistors are usually defined during thei...
Planar MOS-field-effect transistors are common devices today used by the computer industry. When the...
Strained Ge channels on SiGe strain relaxed buffer are grown selectively in active areas surrounded ...
A vertical channel flash memory cell with a silicon germanium layer in the channel region provides e...
Characterization and Optimization of Selectively Grown Vertical Si-MOS Transistors The subject of th...