Add to ORKGAbs t rac t A method for assigning Monte-Carlo calculated quantities to nonuniform grids is pre-sented. Assignment is done in a computationally efficient way by convolution allowing both even and odd weighting functions. The problem of data normalization and differentiation of data with statistical origin is analyzed. The method is applied to study nonlocal transport effects in submicron semiconductor structures.
This paper is concerned with electron transport and heat generation in semiconductor devices. An imp...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
Résumé Étude du transport d\'électron dans le substrat InAs de type N par la sim ulation de M onte C...
Introduction Conventional algorithms for semiconductor device modeling are based on steady-state tra...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
In typical particle simulations applied to device problems, it is desirable to simulate regions havi...
A critical review of the Monte Carlo simulation as applied to semiconductor device modelling is pres...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new statistical enhancement technique (split-and-remove technique) in Monte Carlo device simulatio...
The book contains all the information considered necessary to set up a Monte Carlo simulator of an e...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
. This paper describes two implementations of a semiconductor device simulator on two different arc...
This work presents a study of the applicability of a massively parallel computing paradigm to Monte ...
A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-...
This paper is concerned with electron transport and heat generation in semiconductor devices. An imp...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
Résumé Étude du transport d\'électron dans le substrat InAs de type N par la sim ulation de M onte C...
Introduction Conventional algorithms for semiconductor device modeling are based on steady-state tra...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
In typical particle simulations applied to device problems, it is desirable to simulate regions havi...
A critical review of the Monte Carlo simulation as applied to semiconductor device modelling is pres...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
A new statistical enhancement technique (split-and-remove technique) in Monte Carlo device simulatio...
The book contains all the information considered necessary to set up a Monte Carlo simulator of an e...
A Monte Carlo simulator for silicon devices has been developed. The band structure data for this sel...
port simulation oers the possibility to ex-tract information about all quantities deriv-able from th...
. This paper describes two implementations of a semiconductor device simulator on two different arc...
This work presents a study of the applicability of a massively parallel computing paradigm to Monte ...
A Monte Carlo simulator of the electron dynamics in the channel, coupled with a solution of the two-...
This paper is concerned with electron transport and heat generation in semiconductor devices. An imp...
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor...
Résumé Étude du transport d\'électron dans le substrat InAs de type N par la sim ulation de M onte C...