A New Backscattering Model for Nano-MOSFET Compact Modeling

For fast computation of drain current in Nano-MOSFET, we have developed a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel. The main elements of this model are deduced from careful analysis of transport in devices using Monte Carlo simulation. The backscattering coefficient is in very good agreement with the results of Monte Carlo spectroscopy for MOS transistors and N+/N/N+ diodes.