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ine The deposition of boron-doped homoepitaxial single crystal diamond is investigated using a microwave plasma-assisted chemical vapor Diamond's unique properties like wide band gap, high diamond can be achieved by introducing boron in the gas phase during the diamond deposition process. It is known that high boron Up to now, boron-doped single crystal diamond has been system [3], is used to deposit boron-doped diamond on single crystal HPHT diamond substrates. The substrates used are type Ib HPHT diamond seeds that are 3.5 mm×3.5 mm. The diamond seed is placed on a molybdenum substrate holder that Available online at www.sciencedirect.com Diamond & Related Materials 17doping levels can result in the formation of electronic defects in thebreakdown voltage, high electron and hole mobilities make it suitable for applications in high temperature electronics. In order to achieve device quality diamond, it needs to have low concentra-tions of defects and imperfections. Polycrystalline diamond ha