In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results with the theoretical estimation of the electrical resistance. Finally we show that the magnetoresistance for the different geometries does not scale with the resistance of the structure and obtain drops in voltage of 20mV at 20Oe. 2 Nowadays technologies for communications, automotive, medical and other areas of interest are demanding more and more nanometer size integrated structures. One of the fields that lately have taken mo...
We have measured magnetoresistance in single, 1 micron external diameter, Permalloy Ni80Fe20circular...
The authors present experiments and discuss recent results on ballistic magnetotesistance in nanomet...
The magnetoresistance (MR) is the change of resistance of a conductor when it is placed in an extern...
Spin-dependent electron transport in submicron/nano sized magnetic thin film devices fabricated usin...
For several years, thin films of ferromagnetic materials with metallic spacer layers showing giant m...
In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in ma...
We report on fabrication and characterization of two types of devices, both with submicronic dimensi...
Simple magnetoresistive nanodevices formed by narrow constrictions of submicron width in the epi-tax...
We have studied the magnetoresistance behavior in thin films and very narrow wires of ferromagnetic ...
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim We used lithographically fabricated nanoconstric...
domain wall; mag-netoresistance; dwmr; constrained geometries We report the use of electron beam lit...
Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabri...
A new technique for fabricating magnetic nanowire transport devices is developed by exposing an orde...
We have measured magnetoresistance in single, 1 μm external diameter, Permalloy (Ni80Fe20) circular ...
We have measured magnetoresistance in single, 1 µm external diameter, Permalloy (Ni80Fe20) circular...
We have measured magnetoresistance in single, 1 micron external diameter, Permalloy Ni80Fe20circular...
The authors present experiments and discuss recent results on ballistic magnetotesistance in nanomet...
The magnetoresistance (MR) is the change of resistance of a conductor when it is placed in an extern...
Spin-dependent electron transport in submicron/nano sized magnetic thin film devices fabricated usin...
For several years, thin films of ferromagnetic materials with metallic spacer layers showing giant m...
In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in ma...
We report on fabrication and characterization of two types of devices, both with submicronic dimensi...
Simple magnetoresistive nanodevices formed by narrow constrictions of submicron width in the epi-tax...
We have studied the magnetoresistance behavior in thin films and very narrow wires of ferromagnetic ...
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim We used lithographically fabricated nanoconstric...
domain wall; mag-netoresistance; dwmr; constrained geometries We report the use of electron beam lit...
Cross-like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabri...
A new technique for fabricating magnetic nanowire transport devices is developed by exposing an orde...
We have measured magnetoresistance in single, 1 μm external diameter, Permalloy (Ni80Fe20) circular ...
We have measured magnetoresistance in single, 1 µm external diameter, Permalloy (Ni80Fe20) circular...
We have measured magnetoresistance in single, 1 micron external diameter, Permalloy Ni80Fe20circular...
The authors present experiments and discuss recent results on ballistic magnetotesistance in nanomet...
The magnetoresistance (MR) is the change of resistance of a conductor when it is placed in an extern...