Electric properties of TlInS2 single crystals

Abstract. Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅1010 cm−3; concentration of traps Nt = 1012cm−3; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10−3cm2/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV