The miniaturization of integrated circuits (ICs) has led to the use of copper and low-k dielectrics in the interconnect struc-ture. Due to both the use of new materials and the decreased dimensions, the thermo-mechanical reliability of ICs is be
International audienceThe integration of low-k interlayer dielectrics in interconnects is associated...
Theoretical analyses on the thermo-mechanical behavior of power modules designed in a new buildup an...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of in...
As there is a need to increase the number of transistors while lowering chip dimensions and reducing...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
Abstract—Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Cop...
Time-dependent dielectric breakdown (TDDB) reliability is increasingly becoming a critical reliabili...
textElectromigration (EM) reliability was investigated for dual-damascene Cu/oxide and Cu/low k int...
was published in Materials and is made available as an electronic reprint (preprint) with permission...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
More than 65% of IC failures are related to thermal and mechanical problems. For wafer backend proce...
Since recent years, micro-electronic industry changed the basic materials from Al/SiO2 to Cu/low-k i...
International audienceThe integration of low-k interlayer dielectrics in interconnects is associated...
Theoretical analyses on the thermo-mechanical behavior of power modules designed in a new buildup an...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...
Cu and low-dielectric-constant (k) metallization schemes are critical for improved performance of in...
As there is a need to increase the number of transistors while lowering chip dimensions and reducing...
Advanced interconnect technologies require the continuous development of reliable low-k dielectric m...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra...
Abstract—Backend low-k time-dependent dielectric breakdown degrades reliability of circuits with Cop...
Time-dependent dielectric breakdown (TDDB) reliability is increasingly becoming a critical reliabili...
textElectromigration (EM) reliability was investigated for dual-damascene Cu/oxide and Cu/low k int...
was published in Materials and is made available as an electronic reprint (preprint) with permission...
Copper and low dielctric constantant (k) materials are poised to become the dominant interconnect sc...
More than 65% of IC failures are related to thermal and mechanical problems. For wafer backend proce...
Since recent years, micro-electronic industry changed the basic materials from Al/SiO2 to Cu/low-k i...
International audienceThe integration of low-k interlayer dielectrics in interconnects is associated...
Theoretical analyses on the thermo-mechanical behavior of power modules designed in a new buildup an...
textInterconnect scaling has given rise to serious reliability concerns under the impact of low k i...