Add to ORKGWe have observed surface blistering and splitting of silicon implanted with moderate dose boron and higher dose hydrogen with concentration peaks that are offset. The splitting has been observed to occur near the location of the boron peak after a 10 minute anneal at 300 °C
L'implantation d'hydrogène à forte dose est utilisée dans le procédé Smart Cut(tm) afin de transfére...
The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion),...
cited By 2International audienceH implantation results in the appearance of tensile out-of-plane str...
Silicon-on-insulator (SOI) structures were introduced in the 1960s and exhibit several advantages ov...
A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded ...
The strength of the H-implanted layer has been measured in <1 0 0>, <1 1 1> and <1 1 ...
Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion...
The investigation and development of methods for the management of parameters of an admixture-defect...
The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have b...
Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semic...
In a grazing incidence X-ray diffuse scattering investigation of boron implanted silicon we have dis...
Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si ...
We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. T...
We have used the crack opening method to study the mechanical exfoliation behaviour in hydrogen impl...
\u3cp\u3eEpitaxial silicon bonde layers, located at the surface or within the bulk of single-crystal...
L'implantation d'hydrogène à forte dose est utilisée dans le procédé Smart Cut(tm) afin de transfére...
The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion),...
cited By 2International audienceH implantation results in the appearance of tensile out-of-plane str...
Silicon-on-insulator (SOI) structures were introduced in the 1960s and exhibit several advantages ov...
A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded ...
The strength of the H-implanted layer has been measured in <1 0 0>, <1 1 1> and <1 1 ...
Ion beam techniques were used to study silicon‐on‐insulator (SOI) structures manufactured by the ion...
The investigation and development of methods for the management of parameters of an admixture-defect...
The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have b...
Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semic...
In a grazing incidence X-ray diffuse scattering investigation of boron implanted silicon we have dis...
Hydrogen ion implantation is conventionally used to initiate the transfer of Si thin layers onto Si ...
We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. T...
We have used the crack opening method to study the mechanical exfoliation behaviour in hydrogen impl...
\u3cp\u3eEpitaxial silicon bonde layers, located at the surface or within the bulk of single-crystal...
L'implantation d'hydrogène à forte dose est utilisée dans le procédé Smart Cut(tm) afin de transfére...
The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion),...
cited By 2International audienceH implantation results in the appearance of tensile out-of-plane str...