Add to ORKGA theoretical research is presented concerning the potential distribution and electric eld intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n+ n junction. Key words: quantum dots, electron-deformation and electrostatic potentials PACS: 68.65.Hb, 73.21.La, 73.63.Kv 1
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
An electrostatic model was presented for the calculation of the capacitance-voltage characteristics ...
Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic...
A theoretical research is presented concerning the potential distribution and electric field intensi...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has be...
Quantum-confined Stark effects in InAs/GaAs self-assembled quantum dots are investigated theoretical...
In a series of recent papers we demonstrated that coupled electro-mechanical effects can lead to pro...
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route thro...
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double q...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting...
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route thro...
This thesis describes an experimental study of the electronic properties of semiconductor heterostru...
Qubits for quantum computer applications can be based on many different types of architectures and...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
An electrostatic model was presented for the calculation of the capacitance-voltage characteristics ...
Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic...
A theoretical research is presented concerning the potential distribution and electric field intensi...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has be...
Quantum-confined Stark effects in InAs/GaAs self-assembled quantum dots are investigated theoretical...
In a series of recent papers we demonstrated that coupled electro-mechanical effects can lead to pro...
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route thro...
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double q...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting...
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route thro...
This thesis describes an experimental study of the electronic properties of semiconductor heterostru...
Qubits for quantum computer applications can be based on many different types of architectures and...
An array of semiconductor quantum dots is studied computationally using an approach that couples lin...
An electrostatic model was presented for the calculation of the capacitance-voltage characteristics ...
Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic...