Add to ORKGWe compare radiation effects on the highest density multi-level cell NOR and single-level cell NAND flash memories to the previous generations. Total ionization dose (TID) test results show unexpected failure modes
Space applications frequently use flash memories for mass storage data. However, the technology appl...
The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories f...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss rete...
higher density flash memories. Stand-by currents and functionality tests were used to characterize t...
NAND Flash memories are the leader among high capacity non-volatile memory technologies and are beco...
We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by ...
This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing...
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are repo...
Flash memories operating in space are subject at the same time to the progressive accumulation of to...
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are ...
We review ionizing radiation effects in Flash memories, the current dominant technology in the comme...
Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, ...
The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices ...
We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ...
Space applications frequently use flash memories for mass storage data. However, the technology appl...
The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories f...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...
We study total dose effects in advanced multi- and single-level NAND Flash memories. We discuss rete...
higher density flash memories. Stand-by currents and functionality tests were used to characterize t...
NAND Flash memories are the leader among high capacity non-volatile memory technologies and are beco...
We report on the SEE and TID (total ionizing dose) tests of higher density flash memories. Stand-by ...
This paper studies the system-level reliability of 16nm MLC NAND flash memories under total ionizing...
Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are repo...
Flash memories operating in space are subject at the same time to the progressive accumulation of to...
Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are ...
We review ionizing radiation effects in Flash memories, the current dominant technology in the comme...
Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, ...
The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices ...
We analyzed floating-gate upsets in 25-nm multilevel cell NAND Flash memories irradiated with heavy ...
Space applications frequently use flash memories for mass storage data. However, the technology appl...
The variability in the total ionizing dose response of 25-nm single level cell NAND Flash memories f...
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and fou...