Add to ORKGAbstract- For sensor and communication system applications, Monolithic Microwave Integrated Circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of pHEMT ICs for communication, and sensor applications up to 100 GHz is discussed.
In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is ne...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) f...
A chip set for millimeter-wave sensor applications, especially automotive radar systems, is describe...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
A 77-GHz automotive radar system for collision avoidance and intelligent cruise control has recently...
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate leng...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MM...
In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is ne...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...
For communication and sensor system applications, Monolithic Microwave Integrated Circuits (MMICs) f...
A chip set for millimeter-wave sensor applications, especially automotive radar systems, is describe...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
A 77-GHz automotive radar system for collision avoidance and intelligent cruise control has recently...
Metamorphic high electron mobility transistor (mHEMT) technologies with 100, 50, and 35 nm gate leng...
During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave mo...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
The Fraunhofer IAF developed a variety of advanced mixed-signal monolithic integrated circuits (ICs)...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
Using advanced III/V process technologies, a variety of state-of-the-art millimeter-wave monolithic ...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MM...
In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is ne...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
ABSTRACT — Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 ” GaAs substrates ...