In this paper a short overview is given of the several FET-based sensor devices and the operational principle of the ISFET is summarized. Some of the shortcomings of the FET sensors were circumvented by an alternative operational mode, resulting in a device capable of acid/base concentration determination by coulometric titrant generation as well as in an original pH-static enzyme sensor. A more recent example is presented in which the ISFET is used for the on-line monitoring of fermentation processes. Future research is directed towards direct covalent coupling of organic monolayers on the silicon itself. In addition, the field-effect can be applied to the so-called semiconducting nanowire devices, ultimately making single molecule detecti...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
A biosensor based on a nanowire field-effect transistor is demonstrated on a bulk silicon wafer for ...
In this paper a short overview is given of the several FET-based sensor devices and the operational ...
In this paper a short overview is given of the several FET-based sensor devices and the operational ...
345-353Introduced as a tool for electrophysiology three and a half decades ago, the ion-sensitive fi...
Field-effect transistor (FET) sensors and in particular their nanoscale variant of silicon nanowire ...
In this paper, we address the increasingly important and rapidly developing field of ISFET-based sil...
In this paper, we address the increasingly important and rapidly developing field of ISFET-based sil...
In this paper we address the increasingly important and rapidly developing fied of ISFET-based silic...
In recent years there has been great progress in applying FET-type biosensors for highly sensitive b...
As on the one handa field effect transistor (FET) is a widespreadelectronic device for a potentiome...
Automation diagnostic methods and techniques of environmental monitoring combined with higher precis...
This paper reviews the results that have been reported on ISFET based enzyme sensors. The most impor...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
A biosensor based on a nanowire field-effect transistor is demonstrated on a bulk silicon wafer for ...
In this paper a short overview is given of the several FET-based sensor devices and the operational ...
In this paper a short overview is given of the several FET-based sensor devices and the operational ...
345-353Introduced as a tool for electrophysiology three and a half decades ago, the ion-sensitive fi...
Field-effect transistor (FET) sensors and in particular their nanoscale variant of silicon nanowire ...
In this paper, we address the increasingly important and rapidly developing field of ISFET-based sil...
In this paper, we address the increasingly important and rapidly developing field of ISFET-based sil...
In this paper we address the increasingly important and rapidly developing fied of ISFET-based silic...
In recent years there has been great progress in applying FET-type biosensors for highly sensitive b...
As on the one handa field effect transistor (FET) is a widespreadelectronic device for a potentiome...
Automation diagnostic methods and techniques of environmental monitoring combined with higher precis...
This paper reviews the results that have been reported on ISFET based enzyme sensors. The most impor...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
Sensors based on the field-effect principle have been used for more than fifty years in a variety of...
A biosensor based on a nanowire field-effect transistor is demonstrated on a bulk silicon wafer for ...