Treatment with ammonium sulfide [(NH4)2Sx] solutions is used to produce model passivated InAs (001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized by x-ray photoelectron spectroscopy (XPS), atomic force microscopy, and Hall measurements. The sulfur passivation also preserves the surface charge accumulation layer, increasing the associated downward band bending
InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties o...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
The effects of treatment with ammonium sulfide ((NH4)(2)S-x) solution on the electronic properties o...
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have b...
Abstract. Using density functional theory, we have studied surface structural and electronic propert...
We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivatio...
The passivation of InAs(001) surfaces by exposure to sulphur in ultra-high vacuum (UHV), followed by...
Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(1...
SiGe 25% substrates were treated with aqueous solutions of ammonium sulfide with and without added a...
Atomic-layer-deposited Al2O3 films were grown on ultrathin-body In-0.53 Ga0.47As substrates for IIIV...
The quaternary III\u2013V compound semiconductor GaInAsP is an important material for many optoelect...
Abstract—In this work, ammonium sulfide ((NH4)2S) solution was used to passivated the surfaces of In...
The chemical composition and the electronic properties of the n-GaP(100) surface treated with ammoni...
Semiconducting nanomaterials synthesized using wet chemical techniques play an important role in eme...
Sulfur was embedded in atomic-layer-deposited (ALD) HfO2 films grown on Ge substrate by annealing un...
InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties o...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
The effects of treatment with ammonium sulfide ((NH4)(2)S-x) solution on the electronic properties o...
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have b...
Abstract. Using density functional theory, we have studied surface structural and electronic propert...
We have studied the formation of ohmic contacts to InAs nanowires by chemical etching and passivatio...
The passivation of InAs(001) surfaces by exposure to sulphur in ultra-high vacuum (UHV), followed by...
Atomic hydrogen cleaning has been used to produce structurally and electronically damage-free InAs(1...
SiGe 25% substrates were treated with aqueous solutions of ammonium sulfide with and without added a...
Atomic-layer-deposited Al2O3 films were grown on ultrathin-body In-0.53 Ga0.47As substrates for IIIV...
The quaternary III\u2013V compound semiconductor GaInAsP is an important material for many optoelect...
Abstract—In this work, ammonium sulfide ((NH4)2S) solution was used to passivated the surfaces of In...
The chemical composition and the electronic properties of the n-GaP(100) surface treated with ammoni...
Semiconducting nanomaterials synthesized using wet chemical techniques play an important role in eme...
Sulfur was embedded in atomic-layer-deposited (ALD) HfO2 films grown on Ge substrate by annealing un...
InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties o...
InP(100) surfaces were S passivated in S2Cl2, (NH4)2S and sulfide-containing Br2 solutions. After S2...
The effects of treatment with ammonium sulfide ((NH4)(2)S-x) solution on the electronic properties o...