Add to ORKGextraction procedure for thermal parameters of high power heterojunction bipolar transistors (HBT) with pulsed I-V measurements is presented. The pulsed measurements become essential to model thermal effect and frequency dispersion of high frequency devices. The measurement setup used here can be configured with commercially available components
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
Abstract—Dynamic temperature distributions in GaAs HBT are numerically analyzed in frequency domain ...
International audienceThis paper presents a novel pulsed I/V measurement methodology applied to HBTs...
International audienceA new technique and setup that enable pulsed I/V measurements of heterojunctio...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunctio...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction...
International audienceA new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is p...
In this work we show a method for the thermal dynamic modeling of packaged HBT's, The method employs...
A new practical technique for estimating the junction temperature and the thermal resistance of an H...
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceThis paper presents a new automated and vector error-corrected active load-pul...
none3A simple method is proposed to derive the junction temperature and the bias- and temperature-d...
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
Abstract—Dynamic temperature distributions in GaAs HBT are numerically analyzed in frequency domain ...
International audienceThis paper presents a novel pulsed I/V measurement methodology applied to HBTs...
International audienceA new technique and setup that enable pulsed I/V measurements of heterojunctio...
Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transist...
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunctio...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction...
International audienceA new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is p...
In this work we show a method for the thermal dynamic modeling of packaged HBT's, The method employs...
A new practical technique for estimating the junction temperature and the thermal resistance of an H...
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar tra...
International audienceThis paper presents a new automated and vector error-corrected active load-pul...
none3A simple method is proposed to derive the junction temperature and the bias- and temperature-d...
International audienceThis paper has two main axis: firstly, we address the experimental characteriz...
International audienceIn this paper, a simple and accurate characterization method of the thermal im...
Abstract—Dynamic temperature distributions in GaAs HBT are numerically analyzed in frequency domain ...