Parameter extraction method for ultra-thin oxide MOSFETs using small-signal channel conductance measurement

Abstract: In this paper, a simple parameter extraction method based on the relationship between small-signal channel conductance and gate bias is proposed for ultra-thin oxide MOSFETs using small-signal channel conductance measurement. This method extracts the threshold voltage, source/drain series resistance, gain factor, and two gate field related mobility degradation parameters from the measurement of small-signal conductance of a transistor as a function of dc gate bias with zero drain bias. The technique adopts an empirical mobility model accounting for the high gate-field related mobility degradation that is suitable for MOSFETs with ultra-thin oxide in advanced technology. The effective mobility and effective channel length and width can also be obtained by carrying out the extraction method for devices with different geometries. The extracted results of experimental data obtained by the proposed method are compared with those obtained by the other method. In addition, a good agreement of simulated results to the experimental data is obtained by the proposed method. Key-Words: Parameter extraction, mobility model, small-signal channel conductance measurement.