Invited Paper ELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS SILICON PREPARED IN EXPANDING THERMAL PLASMAS

Expanding Thermal Plasma Deposition of a-Si:H Thin Films for Surface Passivation of c-Si Wafers,

Illiberi, A Andrea
Verlaan, V Vasco
Creatore, M Adriana
Kessels, WMM Erwin
Sanden, MCM Richard van de

January 2009

We investigated the material properties of expanding thermal plasma deposited a-Si:H thin films, pro...

Expanding Thermal Plasma Deposition of Hydrogenated Amorphous Silicon for Solar Cells

For Solar Cellsagnès Petit
Agnès Marie
Henriette Noëlle Petit
Ingénieur Matériaux
Rector Magnificus Voorzitter

January 2006

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Smit, C.
Klaver, A.
Korevaar, B.A.
Petit, A.M.H.N.
Williamson, D.L.
Swaaij, van, R.A.C.M.M.
Sanden, van de, M.C.M.

January 2005

Hydrogenated microcrystalline silicon has been deposited at elevated deposition rates using an expan...

New high rate deposition tool for hydrogenated amorphous silicon (a-Si:H) thin film solar cells

Korevaar, B.A.
Kessels, W.M.M.
Smets, A.H.M.
Girwar, B.S.
Sande, van de, M.J.F.
Metselaar, J.W.
Sanden, van de, M.C.M.
Swaaij, van, R.A.C.M.M.
Schram, D.C.

January 1998

In the expanding thermal plasma set-up of the Eindhoven University of Technology relatively high dep...

Investigation of the relation between growth mechanism and material properties of amorphous silicon solar cells

Adejumo, K.O. (author)

July 2009

Thin film silicon solar cells are produced by using plasma deposition techniques. With this techniqu...

Improvement of the material properties by employing external rf substrate bias during a-Si:H deposition by a remote expanding thermal plasma

Smets, A.H.M.
Petit, A.M.H.N.
Nadazdy, V.
Kessels, W.M.M.
Swaaij, van, R.A.C.M.M.
Sanden, van de, M.C.M.

January 2005

An external rf substrate bias (ERFSB) has been employed during high rate deposition of hydrogenated ...

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Wank, M.A.
Van Swaaij, R.A.C.M.M.
Kudlacek, P.
Van de Sanden, M.C.M.
Zeman, M.

November 2010

We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amor...

Solar cells with intrinsic a-Si:H deposited at rates larger than 5Å/s by the expanding thermal plasma

Korevaar, BA Bas
Smit, C Chiel
Swaaij, RACMM René van
Smets, AHM Arno
Kessels, WMM Erwin
Metselaar, JW
Schram, DC Daan
Sanden, MCM Richard van de

January 2000

Using an expanding thermal plasma, hydrogenated amorphous silicon films with good optoelectronic pro...

Deposition of a-Si:H using a supersonically expanding argon plasma

Meeusen, G.J.
Qing, Z.
Wilbers, A.T.M.
Schram, D.C.

December 1991

Amorphous Hydrogenated Silicon (a-Si:H) is a material that is widely used in the field of solar cell...

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

Kessels, WMM Erwin
Severens, RJ René
Smets, AHM Arno
Korevaar, BA Bas
Adriaenssens, GJ
Schram, DC Daan
Sanden, MCM Richard van de

January 2001

The properties of hydrogenated amorphous silicon (a-Si:H) deposited at very high growth rates (6–80 ...

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

Severens, R. J.
van de Sanden, M. C.M.
Verhoeven, H. J.M.
Bastiaanssen, J.
Schram, D. C.
Hack, M.

December 1996

Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than...

Expanding Thermal Plasma Deposition of a-Si:H Thin Films for Surface Passivation of c-Si Wafers,

Illiberi, A Andrea
Verlaan, V Vasco
Creatore, M Adriana
Kessels, WMM Erwin
Sanden, MCM Richard van de

January 2009

We investigated the material properties of expanding thermal plasma deposited a-Si:H thin films, pro...

Expanding Thermal Plasma Deposition of Hydrogenated Amorphous Silicon for Solar Cells

For Solar Cellsagnès Petit
Agnès Marie
Henriette Noëlle Petit
Ingénieur Matériaux
Rector Magnificus Voorzitter

January 2006

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Smit, C.
Klaver, A.
Korevaar, B.A.
Petit, A.M.H.N.
Williamson, D.L.
Swaaij, van, R.A.C.M.M.
Sanden, van de, M.C.M.

January 2005

Hydrogenated microcrystalline silicon has been deposited at elevated deposition rates using an expan...

New high rate deposition tool for hydrogenated amorphous silicon (a-Si:H) thin film solar cells

Korevaar, B.A.
Kessels, W.M.M.
Smets, A.H.M.
Girwar, B.S.
Sande, van de, M.J.F.
Metselaar, J.W.
Sanden, van de, M.C.M.
Swaaij, van, R.A.C.M.M.
Schram, D.C.

January 1998

In the expanding thermal plasma set-up of the Eindhoven University of Technology relatively high dep...

Investigation of the relation between growth mechanism and material properties of amorphous silicon solar cells

Adejumo, K.O. (author)

July 2009

Thin film silicon solar cells are produced by using plasma deposition techniques. With this techniqu...

Improvement of the material properties by employing external rf substrate bias during a-Si:H deposition by a remote expanding thermal plasma

Smets, A.H.M.
Petit, A.M.H.N.
Nadazdy, V.
Kessels, W.M.M.
Swaaij, van, R.A.C.M.M.
Sanden, van de, M.C.M.

January 2005

An external rf substrate bias (ERFSB) has been employed during high rate deposition of hydrogenated ...

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Wank, M.A.
Van Swaaij, R.A.C.M.M.
Kudlacek, P.
Van de Sanden, M.C.M.
Zeman, M.

November 2010

We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amor...

Solar cells with intrinsic a-Si:H deposited at rates larger than 5Å/s by the expanding thermal plasma

Korevaar, BA Bas
Smit, C Chiel
Swaaij, RACMM René van
Smets, AHM Arno
Kessels, WMM Erwin
Metselaar, JW
Schram, DC Daan
Sanden, MCM Richard van de

January 2000

Using an expanding thermal plasma, hydrogenated amorphous silicon films with good optoelectronic pro...

Deposition of a-Si:H using a supersonically expanding argon plasma

Meeusen, G.J.
Qing, Z.
Wilbers, A.T.M.
Schram, D.C.

December 1991

Amorphous Hydrogenated Silicon (a-Si:H) is a material that is widely used in the field of solar cell...

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

Kessels, WMM Erwin
Severens, RJ René
Smets, AHM Arno
Korevaar, BA Bas
Adriaenssens, GJ
Schram, DC Daan
Sanden, MCM Richard van de

January 2001

The properties of hydrogenated amorphous silicon (a-Si:H) deposited at very high growth rates (6–80 ...

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

Severens, R. J.
van de Sanden, M. C.M.
Verhoeven, H. J.M.
Bastiaanssen, J.
Schram, D. C.
Hack, M.

December 1996

Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than...

Expanding Thermal Plasma Deposition of a-Si:H Thin Films for Surface Passivation of c-Si Wafers,

Illiberi, A Andrea
Verlaan, V Vasco
Creatore, M Adriana
Kessels, WMM Erwin
Sanden, MCM Richard van de

January 2009

We investigated the material properties of expanding thermal plasma deposited a-Si:H thin films, pro...

Expanding Thermal Plasma Deposition of Hydrogenated Amorphous Silicon for Solar Cells

For Solar Cellsagnès Petit
Agnès Marie
Henriette Noëlle Petit
Ingénieur Matériaux
Rector Magnificus Voorzitter

January 2006

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Smit, C.
Klaver, A.
Korevaar, B.A.
Petit, A.M.H.N.
Williamson, D.L.
Swaaij, van, R.A.C.M.M.
Sanden, van de, M.C.M.

January 2005

Hydrogenated microcrystalline silicon has been deposited at elevated deposition rates using an expan...

Invited Paper ELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS SILICON PREPARED IN EXPANDING THERMAL PLASMAS

Abstract

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Invited Paper ELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS SILICON PREPARED IN EXPANDING THERMAL PLASMAS

Abstract

Extracted data

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