Add to ORKGA comprehensive study on efficency of multigrid methods in two-dimensional impurity redistribution simulation is presented. Impurity diffusion equation in non-conformally transformed rectangular simulation domain is considered as a mathematical model for impurity redistribution process. The theoretical part of the study is based on the smoothing efficiency factor predicted by local mode analysis. On the other hand two practi-cal impurity redistribution examples from VLSI technology are used for numerical experiments with an actual multigrid program to predict global efficiency through convergence efficiency factor and multigrid gain factor
The two-dimensional (2-D) redistribution of impurities in semiconductors is an important step for th...
The application of the multigrid method MGD1 for the efficient and stable simulation of electrochemi...
A model has been developed that can account for both front and back "autodoping " effects ...
Robust and efficient grid refinement strategies for an adaptive multigrid simu-lation of diffusion p...
Modeling of semiconductor devices leads to a nonlinear singular perturbed system of partial differen...
The efficiency of three multigrid methods for solving highly non-linear diffusion problems on two-di...
In this paper, we introduce a method for the fast simulation of 3D impurity profile simulation We an...
This paper presents a multigrid approach using adaptive local refinements for the two-dimensional si...
This paper describes a numerical technique used for 2D device simulation. It is demonstrated that th...
The multigrid method has been shown to be the most effective general method for solving the multi-di...
The complexity of the future processing models and the need for three-dimensional simulation require...
In fusion devices strongly localized intensive sources of impurities may arise unexpectedly or can b...
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volum...
The impurity transport simulation code coupled with 1-D (dimensional) transport / 3-D equilibrium TO...
We present a numerical analysis of linear multigrid operators for the high-order Flux Reconstruction...
The two-dimensional (2-D) redistribution of impurities in semiconductors is an important step for th...
The application of the multigrid method MGD1 for the efficient and stable simulation of electrochemi...
A model has been developed that can account for both front and back "autodoping " effects ...
Robust and efficient grid refinement strategies for an adaptive multigrid simu-lation of diffusion p...
Modeling of semiconductor devices leads to a nonlinear singular perturbed system of partial differen...
The efficiency of three multigrid methods for solving highly non-linear diffusion problems on two-di...
In this paper, we introduce a method for the fast simulation of 3D impurity profile simulation We an...
This paper presents a multigrid approach using adaptive local refinements for the two-dimensional si...
This paper describes a numerical technique used for 2D device simulation. It is demonstrated that th...
The multigrid method has been shown to be the most effective general method for solving the multi-di...
The complexity of the future processing models and the need for three-dimensional simulation require...
In fusion devices strongly localized intensive sources of impurities may arise unexpectedly or can b...
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volum...
The impurity transport simulation code coupled with 1-D (dimensional) transport / 3-D equilibrium TO...
We present a numerical analysis of linear multigrid operators for the high-order Flux Reconstruction...
The two-dimensional (2-D) redistribution of impurities in semiconductors is an important step for th...
The application of the multigrid method MGD1 for the efficient and stable simulation of electrochemi...
A model has been developed that can account for both front and back "autodoping " effects ...