Metal–semiconductor nanojunctions and their rectification characteristics

Abstract. Junctions of silver–copper oxide and silver–zinc oxide, respectively were prepared within the pores of diameters, 20 nm, in anodic aluminium oxide membranes. Voltage–current characteristics were measured over the temperature range 373–573 K which showed rectification behaviour. Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure gene-rated as a result of thermal expansion of the metallic phases concerned between the electrodes. This is consis-tent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure