Many of the current memory architectures embed a SRAM cache within the DRAM memory. These architectures ex-ploit a wide internal data bus to transfer an entire DRAM row to the on-memory cache. However, applications exhibit a varying spatial locality across the different DRAM rows that are accessed and buffering the entire row may be waste-ful. In order to adapt to the changing spatial locality, we propose a Variable Line size Cached DRAM (VL-CDRAM) that can buffer portions of an accessed DRAM row. Our evaluation shows that the proposed approach is effective in not only reducing the energy consumption but also in im-proving the performance across various memory configura-tions
Integrating main memory (DRAM) and processors into a single chip, or merged DRAM/logic LSI, makes it...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Phase change memory (PCM) is a promising technology that can offer higher capacity than DRAM. Unfort...
This paper proposes a novel cache architecture suit-able for merged DRAM/logic LSIs, which is called...
This paper proposes an on-chip memory-path architecture employing the dynamically variable line-size...
This paper proposes an on-chip memory-path architecture employing the dynamically variable line-size...
This paper proposes a novel cache architecture suitable for merged DRAM/logic LSIs, which is called ...
This paper proposes a novel cache architecture suitable for merged DRAM/logic LSIs, which is called ...
Abstract—The memory bandwidth can dramatically be improved by means of stacking the main memory (DRA...
In this paper, based on the temporal and spatial locality characteristics of memory accesses in mult...
Main memory has become one of the largest contributors to overall energy consumption and offers many...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Intelligent Memory Systems: Second International Workshop, IMS 2000, Cambridge, MA, USA, November 12...
(c) 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
<p>DRAM-based main memories have read operations that destroy the read data, and as a result, must b...
Integrating main memory (DRAM) and processors into a single chip, or merged DRAM/logic LSI, makes it...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Phase change memory (PCM) is a promising technology that can offer higher capacity than DRAM. Unfort...
This paper proposes a novel cache architecture suit-able for merged DRAM/logic LSIs, which is called...
This paper proposes an on-chip memory-path architecture employing the dynamically variable line-size...
This paper proposes an on-chip memory-path architecture employing the dynamically variable line-size...
This paper proposes a novel cache architecture suitable for merged DRAM/logic LSIs, which is called ...
This paper proposes a novel cache architecture suitable for merged DRAM/logic LSIs, which is called ...
Abstract—The memory bandwidth can dramatically be improved by means of stacking the main memory (DRA...
In this paper, based on the temporal and spatial locality characteristics of memory accesses in mult...
Main memory has become one of the largest contributors to overall energy consumption and offers many...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Intelligent Memory Systems: Second International Workshop, IMS 2000, Cambridge, MA, USA, November 12...
(c) 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
<p>DRAM-based main memories have read operations that destroy the read data, and as a result, must b...
Integrating main memory (DRAM) and processors into a single chip, or merged DRAM/logic LSI, makes it...
DRAM-based main memories have read operations that destroy the read data, and as a result, must buff...
Phase change memory (PCM) is a promising technology that can offer higher capacity than DRAM. Unfort...