Frequency Response of a WG-SACM-APD InGaAs/InP Structure

Abstract:- A theoretical model of a waveguide avalanche photodiode (WG-APD) for an InGaAs/InP with separate absorption, charge and multiplication (SACM) regions, is presented and its frequency response is surveyed. We studied the carrier velocity differences in the adjacent layers and we showed that there are some variations in the case of non equal carrier velocities for the frequency response of the structure. We also found that the same velocities are considered for all layers if we choose an appropriate thickness for different layers. Key-Words:- avalanche photodiode, carrier velocity, frequency response, modelling.