Add to ORKGThe nitridation of AIII-BV semiconductors surfaces has attracted much attention because of the importance of nitride growth on established substrates and of semicon-ductor surface passivation [1,2]. In this work we have investigated the surface nitridation by a bombardment with low-energy N2+ ions at room temperature using X-ray absorption (XANES) and photoemission (XPS)
A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) s...
As feature size in microelectronic devices decreases, silicon nitride and oxynitride are considered ...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
The nitridation effects on GaN surface are dissected by first-principles calculations and manifested...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
interaction of low-energy nitrogen ions (0.3-2 keV N(2)(+)) with GaAs (100) surfaces has been studie...
This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of...
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) sur...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
The reaction mechanisms of nitrogen containing compounds on semiconductor surfaces and the structure...
We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ...
We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of ...
For the advance of GaN based optoelectronic devices, one of the major barriers has been the high def...
The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconducto...
International audienceThis article investigates the nitridation effect of InP(100) semiconductor sur...
A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) s...
As feature size in microelectronic devices decreases, silicon nitride and oxynitride are considered ...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP
The nitridation effects on GaN surface are dissected by first-principles calculations and manifested...
International audienceGaAs(001) substrates nitrided with N 2 plasma at various temperatures were inv...
interaction of low-energy nitrogen ions (0.3-2 keV N(2)(+)) with GaAs (100) surfaces has been studie...
This study demonstrates the formation of two-dimensional GaN on GaAs (001) surface by bombardment of...
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) sur...
The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean GaAs(001) surf...
The reaction mechanisms of nitrogen containing compounds on semiconductor surfaces and the structure...
We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ...
We have studied formation of molecular nitrogen under low-energy nitrogen bombardment in a range of ...
For the advance of GaN based optoelectronic devices, one of the major barriers has been the high def...
The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconducto...
International audienceThis article investigates the nitridation effect of InP(100) semiconductor sur...
A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) s...
As feature size in microelectronic devices decreases, silicon nitride and oxynitride are considered ...
10.1088/0022-3727/29/12/010Journal of Physics D: Applied Physics29122997-3002JPAP