DIELECTRIC CONSTANT OF Fe DOPED TiO2 THIN FILMS

ABSTRACT High dielectric constant materials, as TiO2 thin films, are considered attractive materials for high-density dynamic-memory applications. Dielectric properties of thin films are influenced by impurities doping. These properties have been investigated on ITO/TiO2/Au structures for a large domain of signal frequencies: 102Hz-106Hz. At 100 Hz, the dielectric constant increase from 83.6 for the undoped sample, to 108, by doping with Fe. The dependence of dielectric loss versus frequency was also examined