Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD

We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic mechanical stress in the a-Si:H layer. We study a series of bottom-gate TFTs incorporating a-Si:H deposited by VHF PECVD and hot-wire CVD. All TFTs exhibit good characteristics with mobilities of 0.6–0:7 cm2=V s. The mean activation energy EA and the slope of the barrier-height distribution kBT0 for defect creation in the a-Si:H are deter