In-Situ Characterization During MOVPE Growth of III-Nitrides using Reflectrometry

The suitability of in-situ reflectrometry during low pressure Metal Organic Vapor Phase Epitaxy (MOVPE) growth of GaN was examined using a commercial fiber reflectometer. Reflectrometry was succesfully used for determining deposition rates in a horizontal MOVPE reactor during nitride growth. The initial growth stages such as deposition of low temperature nucleation layer and the initial nucleation of crystalline GaN can be observed in the obtained reflectance spectra as changes in reflectance. 1