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In this paper we describe the implementation of Plasma Enhanced CVD (PECVD) models. We show numerical results for a fully three dimensional structure using level set method techniques. The terms being simulated contain both an isotropic and a source deposition term, along with the effects of reflection and re-emission. Overview Void formation when depositing thin dielectric layers is a major contributor to reliability prob-lems of integrated circuits. The experimental study of these voids in three dimensional structures is very expensive because of the large number of initial topographies and the time/equipment required to analyze the resulting data. Here, we describe an implementation of Plasma Enhanced CVD (PECVD) models and results for three-dimensional structures based on level set methods. Deposi-tion simulations in full three-dimensional structures offer many challenges. Models and simulations developed for two-dimensional structures (such as very long trenches or cylindrically symmetric con-tact holes) require large computer resources when extended to general three-dimensional structures. In particular, (PECVD) processes require flux calculations of direct fluxes from the gas phase from isotropic as well as general angular distributions and re-emission fluxes characterized by a sticking coefficient. Our implementation describes the modeling of PECVD based on the contribution of an Ion Induced Deposition component which is proportional to the direct ion flux arriving at every point of the structure and a chemical vapor deposition component characterized by a re-emission flux. To characterize the ion angular distribution we use an analytical expression given by a cos(θ)n where θ is the angle between the normal of the wafer and the incoming ion direction and n is an integer exponent. This paper applies a robust simulation technique to investigate this problem, and explore the effects of each of the different physical mechanisms involved in this process. This technique allows for topological changes, and the combination of multiple simultaneous effects