Internal Structure Optimization of High Power Pulsed IMPATT Diodes

Abstract:- On the basis of the numerical model that includes precise electrical and thermal sub-models, the extremely energy characteristics are investigated of a pulsed-mode Si double-drift IMPATT diodes for 94 and 140 GHz. The optimization of the internal structure of the diode with a traditional doping profile and with complex doping profile is provided. Semiconductor structures with a complex doping profile are analyzed for improving the power level and efficiency of IMPATT diode with a maximum level of permanent current density. The dependencies of power level, efficiency, and admittance have been investigated as functions of feeding current density for the optimum and for near optimum structures. The technological parameter sensitivity analysis is provided for the variation of the total diode length around the optimal value and for the redistribution of the separate parts between the high and the low doping profile level. The complex semiconductor structures may be recommended for the increase of a real time work period and the reliability of the power pulsed-mode diodes. Key-Words:- Semiconductor microwave devices, modeling and simulation, structure optimization.