Add to ORKGRapid progress is being made in the application of metamorphic growth technology to various device structures. In this work, the material quality of metamorphic structures grown on GaAs substrates is examined as well as recent results for metamorphic HEMTs, PIN diodes, and HBTs
We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular bea...
A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratio...
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are inv...
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and m...
The past year has been an exciting one for metamorphic technology. With the capability of providing ...
InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and l...
InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers w...
Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase e...
The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on G...
We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optim...
The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work...
We report the fabrication of high-performance metamorphic (MM) InP/GaAsSb/InP DHBTs grown on GaAs su...
Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates...
We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5)...
Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many adv...
We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular bea...
A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratio...
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are inv...
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and m...
The past year has been an exciting one for metamorphic technology. With the capability of providing ...
InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and l...
InAlAs/InGaAs metamorphic HEMTs on GaAs have demonstrated low noise figures and high output powers w...
Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase e...
The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on G...
We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optim...
The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work...
We report the fabrication of high-performance metamorphic (MM) InP/GaAsSb/InP DHBTs grown on GaAs su...
Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates...
We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5)...
Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many adv...
We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular bea...
A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/III flux ratio...
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are inv...