ct a Be ig

ion an recombination at states on the device interfaces governs the cell dynamic response. Recombination process was modeled by means of silicon (c-Si) wafers have attracted much attention because technique to obtain information on interface parameters such as the interface defect density. When solar cells are submitted at forward bias or work under illumination, the varying irradiance [3]. The validity of this technique was It is widely admitted that the dominating loss mechanism in heterojunction solar cells is the so-called Shockley– ARTICLE IN PRESSRead–Hall (SRH) recombination at states on the device interfaces [5]. Recombination is then mediated by interface states, which capture both electrons and holes fro