Hot Electrons in Large-Bandgap Bulk Semiconductors and Quantum Wells

The analytical theory of hot electrons interacting with lattice vibrations, impuri-ties, and interface roughness in quantum wells is developed. We have obtained new distribution functions which describe all the kinetic properties of the non-equilibrium electron gas. As a specic example we present the electric eld dependence of the electron mobility in GaN-based quantum wells and in bulk GaN. The relative im-portance of the dierent scattering mechanisms is analysed in detail