The liquid-xenon-jet laser-plasma source is one of the extreme-ultraviolet (EUV) source technologies under develop-ment for EUV lithography. This paper presents some recent improvements of the technology, including the ability to operate a stable plasma at a distance of 50 mm from the nozzle, the first positive mirror-lifetime results, and improved laser-to-EUV conversion efficiency of 0.75 %/(2%BW 2πsr) at λ=13.45 nm
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
Extreme ultraviolet lithography (EUVL) is the leading technology for patterning at the 32 nm technol...
Extreme ultraviolet (EUV) lithography devices that use laser produced plasma (LPP), discharge produc...
We describe a laser-plasma soft-x-ray source based on a cryogenic-xenon liquid-jet target. The sourc...
This paper describes the development of laser produced plasma (LPP) technology as an EUV source for ...
International audienceThe present work, performed in the frame of the EXULITE project, was dedicated...
The most pressing technical issue for the success of EUV lithography is the provision of a high repe...
The authors report on the development of a high power laser plasma Extreme Ultraviolet (EUV) source ...
We have been developing an EUV light source by laser-produced plasma for the use of EUV lithography ...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
Liquid droplet-target laser plasma sources were presented for extreme ultraviolet lithography. A tar...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviole...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
Extreme ultraviolet lithography (EUVL) is the leading technology for patterning at the 32 nm technol...
Extreme ultraviolet (EUV) lithography devices that use laser produced plasma (LPP), discharge produc...
We describe a laser-plasma soft-x-ray source based on a cryogenic-xenon liquid-jet target. The sourc...
This paper describes the development of laser produced plasma (LPP) technology as an EUV source for ...
International audienceThe present work, performed in the frame of the EXULITE project, was dedicated...
The most pressing technical issue for the success of EUV lithography is the provision of a high repe...
The authors report on the development of a high power laser plasma Extreme Ultraviolet (EUV) source ...
We have been developing an EUV light source by laser-produced plasma for the use of EUV lithography ...
Extreme Ultraviolet (EUV) sources rely on droplet laser plasmas for EUV generation. These sources co...
Liquid droplet-target laser plasma sources were presented for extreme ultraviolet lithography. A tar...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature siz...
The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviole...
We have configured a new type of target for laser plasma x-ray generation. This target consists of a...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
Extreme ultraviolet lithography (EUVL) is the leading technology for patterning at the 32 nm technol...
Extreme ultraviolet (EUV) lithography devices that use laser produced plasma (LPP), discharge produc...