CVD Synthesis of HTSC Films Using Volatile Coordination Compounds

Abstract Thin HTSC films of YBa2Cu3O7, nlth high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium ace~lacetonate with a,a'- dipyridyl as precursors. In-situ films were deposited in N2 and O2 gas reactant mixture at reduced substrate temperatures. HTSC films prepared on SrTi03, Z a W and MgO substrates have rather high electric characteristics (e.g. j ~ l 0 ~ -- loS ~lcrn'). The problem of P-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of supercon-ducuve films was bscwsed l.mTTRODUCTION Recently various chemlcal vapor depos~tion techniques have become widely used for production of differ-ent functional materials The main advantages of CVD processes are: simplified apparatus, deposition of coatings (from epitaxial layers to thick films) on large surfaces with intricate geometry, compositional con-trol and thus a flexible preparation of films with specific composition, structure, physical, chemical and me-chanical properties[l,?,3]. Suitability of CVD methods is due to significant progress in chemical synthesis processes providing a wide range of volatile thermal stable metal compounds. Thus metalorganic chemical vapor deposition (MO CVD) is successhlly applied for fabrication of high quality, uniform high tempera-ture superconductive films (HTSC)