Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field

The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1−x Alx As quantum wells is calculated with the use of a variational approach. Results have been ob-tained as a function of the potential symmetry, and the size of the quantum well in the presence of an arbitrary magnetic field. The applied magnetic field is taken to be parallel to the axis of growth of the quantum well structure. The role of the asymmetric barriers, mag-netic field, and well width in the excitonic binding is discussed as the tunability parameters of the GaAs/Ga1−x Alx As system. c © 1998 Academic Press Key words: exciton binding, asymmetric quantum well, magnetic field