MQW design parameter variation in a 1.5 μm wavelength InP-based LW-VCSEL

Abstract:- Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSEL) have profound advantages compared to traditional edge-emitting lasers and its commercialization is gaining momentum as the local and access network in optical communication system expands. In this paper, we present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based long-wavelength vertical-cavity surface emitting laser (LW-VCSEL) utilizing an air-post design. The MQW and barrier thickness were varied and their effect on the device threshold current, optical power, gain, lattice temperature, peak wavelength and reflectivity were analysed and presented. Quantum well thickness of 5.5 nm and barrier thickness of 8 nm gives the optimum threshold current of 0.579 mA, optical power output of 4.2 mW, modal gain of 27 cm-1, lattice temperature of 310.6 K and peak wavelength of 1.562 μm