Active Layer Optimization for IMPATT Diode with Double Avalanche Region

Abstract:- The analysis and optimization of the n+pvnp+ avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model. The phase delay which was produced by means of the two avalanche regions and the drift region v is sufficient to obtain the negative resistance for the wide frequency band. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 340 GHz. Output power level was optimized for the second frequency band near the 220 GHz