Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs

Abstract—We present an atomistic 3-D simulation study of the performance of graphene-nanoribbon (GNR) Schottky-barrier field-effect transistors (SBFETs) and transistors with doped reservoirs (MOSFETs) by means of the self-consistent so-lution of the Poisson and Schrödinger equations within the non-equilibrium Green’s function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance for both digital and terahertz applications. The impact of nonidealities on device per-formance has been investigated, taking into account the presence of single vacancy, edge roughness, and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single-vacancy defect largely affect the performance of both device types. Index Terms—Defect, device simulation, graphene field-effect transistor, graphene nanoribbon, impurity, nonequilibrium Green’s function (NEGF), quantum transport. I