THE INFLUENCE OF GEOMETRY AND TEMPERATURE ON THE PARAMETERS OF INTEGRATED CAPACITORS

The research in this paper is focused on poly-poly capacitors, whose electrodes are built of polysilicon with insulation layer (SiO2) between them. Different models are used for characterization- cpolybr3, cpoly and cpolyrf. Some of them present the capacitor as a three terminal device (cpolybr3, cpolyrf). The simulations are done in the CADANCE environment with Spectre Circuit Simulator. Different connections are made to explore the influence of the layout over the basic characteristics of the capacitor, depending on the number of stripes (parts the capacitor is split into). The value of the explored integrated capacitors is 0.1÷5pF. Two technologies are used – AMS 0.35 um SiGe BiCMOS and 0.8 um SiGe BiCMOS. 1