Abstract—Grain growth in thin films deposited on a substrate was studied theoretically. The thrust of the model proposed is the effect of vacancy generation accompanying grain growth on the rate of the process. In addition, the magnitude of a tensile stress developing in the film was considered. It was shown that due to the contribution of vacancies to the free energy of the system, discernible grain growth is preceded by an “incubation ” period, during which the grain structure can be considered as stable, as the rate of growth is relatively small over this incubation time. During this time, the vacancy concentration remains nearly constant, staying at a level much higher than the thermal equilibrium concentration. Based on numerical analy...
Intrinsic thin film stress is evitable with the thin film deposition process and plays an important ...
The relaxation of stress in a thin film due to grain boundary diffusion is investigated in terms of ...
Tin oxide films were prepared by spray pyrolysis technique with different deposition times (60 - 240...
The mechanisms that have been proposed to govern the grain structure of vapor deposited metallic fil...
The underlying cause of stagnation of grain growth in thin metallic films remains a puzzle. Here it ...
The underlying cause of stagnation of grain growth in thin metallic films remains a puzzle. Here it ...
Microstructural and texture evolution during grain growth in polycrystalline thin films was investig...
We revisit grain growth and the puzzle of its stagnation in thin metallic films. We bring together a...
We revisit grain growth and the puzzle of its stagnation in thin metallic films. We bring together a...
At fixed hold temperatures, grain growth usually stagnates indefinitely after sufficiently long hold...
grantor: University of TorontoWe theoretically and numerically study the growth of thin al...
In recent papers [1,2] we investigated the inhibiting effect of vacancy generation on grain growth. ...
Time dependence of the grain growth in phosphorus doped silicon thin films deposited in situ at 530 ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The relaxation of compressive intrinsic stress for a film-substrate system is modelled with discrete...
Intrinsic thin film stress is evitable with the thin film deposition process and plays an important ...
The relaxation of stress in a thin film due to grain boundary diffusion is investigated in terms of ...
Tin oxide films were prepared by spray pyrolysis technique with different deposition times (60 - 240...
The mechanisms that have been proposed to govern the grain structure of vapor deposited metallic fil...
The underlying cause of stagnation of grain growth in thin metallic films remains a puzzle. Here it ...
The underlying cause of stagnation of grain growth in thin metallic films remains a puzzle. Here it ...
Microstructural and texture evolution during grain growth in polycrystalline thin films was investig...
We revisit grain growth and the puzzle of its stagnation in thin metallic films. We bring together a...
We revisit grain growth and the puzzle of its stagnation in thin metallic films. We bring together a...
At fixed hold temperatures, grain growth usually stagnates indefinitely after sufficiently long hold...
grantor: University of TorontoWe theoretically and numerically study the growth of thin al...
In recent papers [1,2] we investigated the inhibiting effect of vacancy generation on grain growth. ...
Time dependence of the grain growth in phosphorus doped silicon thin films deposited in situ at 530 ...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
The relaxation of compressive intrinsic stress for a film-substrate system is modelled with discrete...
Intrinsic thin film stress is evitable with the thin film deposition process and plays an important ...
The relaxation of stress in a thin film due to grain boundary diffusion is investigated in terms of ...
Tin oxide films were prepared by spray pyrolysis technique with different deposition times (60 - 240...