Butt-joint integrated InAs/InP quantum dot Fabry- Pérot laser devices emitting at 1.5 µm

Abstract. Butt-joint integrated extended cavity InAs/InP (100) quantum dot (QD) Fabry-Pérot laser devices emitting around 1.55 µm are demonstrated. Continuous wave lasing at room temperature is realized with devices of different lengths. The threshold currents, transparency current density, and external differential quantum efficiency are all comparable to those of all-active QD lasers. The Butt-joint reflectivity for straight waveguides is below – 40 dB. Light versus current curves and lasing spectra reveal that for low current, lasing starts on the QD ground state transition, while excited state lasing sets in with increasing current. Monolithically integrated quantum dot (QD) laser devices for photonic integrated circuits have been realized in the InAs/GaAs materials system by selective area – and regrowth techniques [1,2]. We demonstrate the first Butt-joint active-passive integrated QD laser device in the InAs/InP (100) materials system emitting in the technologically important 1.55 µm wavelength region for fiber based optical telecommunication systems. The extended cavity Fabry-Pérot QD laser operates in continuous wave (CW) mode at room temperature (RT) on the QD ground state (GS) transition. The threshol