Optoelectronics properties of FTO/SRO/Si radiation sensors

In this paper, we describe the optoelectronic properties of new metal-insulator-silicon optical sensors, in which the silicon rich oxide layer is used as a leaky insulator. Over a leakage current through the insulator layer, two possible operating modes have been found for sensors. At certain voltage bias, the sensor is likewise photodetector with an abrupt p-n junction. At lowered bias the sensor reveals the properties of “usual ” metal-oxide-semiconductor (MOS) capacitor. If a stepwise voltage bias is applying to structure, new optoelectronics properties of sensor have been obtained due to a transient process taking the place at change of voltage. We assume this process as a basis for designing of new optical sensors with an essential internal signal gain. 1