Add to ORKGEBIC experiments aim a t determining the essen t ia l semiconductor o r de fec t parameters upon which i s dependent. D i f f e r e n t methods of recover ing t h i s in format ion ar
This paper deals with a mathematical model of a SEM-EBIC experiment devised to measure the diffusion...
The possibility to use reactive ion etched Si crystals doped with gold as a model object for diffusi...
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investig...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
An analysis is made of the experimental parameters which can cause errors when EBIC measurements are...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
A new method of extracting minority carrier diffusion length from within a confined region of materi...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An e...
We have developed a model of calculation of the induced current due to an electron beam. The expres...
We present a novel method for determining semiconductor parameters such as diffusion length L, lifet...
The electrical performances of components like solar cells depend partly on the diffusion length val...
The existing EBIC techniques for diffusion-length (DL) determination are reviewed and a new techniqu...
This paper deals with a mathematical model of a SEM-EBIC experiment devised to measure the diffusion...
The possibility to use reactive ion etched Si crystals doped with gold as a model object for diffusi...
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investig...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
An analysis is made of the experimental parameters which can cause errors when EBIC measurements are...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
A new method of extracting minority carrier diffusion length from within a confined region of materi...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An e...
We have developed a model of calculation of the induced current due to an electron beam. The expres...
We present a novel method for determining semiconductor parameters such as diffusion length L, lifet...
The electrical performances of components like solar cells depend partly on the diffusion length val...
The existing EBIC techniques for diffusion-length (DL) determination are reviewed and a new techniqu...
This paper deals with a mathematical model of a SEM-EBIC experiment devised to measure the diffusion...
The possibility to use reactive ion etched Si crystals doped with gold as a model object for diffusi...
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investig...