Add to ORKGThe effect of oblique deposition on the optical and electrical properties of As2S3 and As2Se3 thin films has been investigated. Amorphous films of As2S3 and As2Se3 were deposited on glass substrate by vacuum evaporation of source materials. The indirect- optical bandgap energy was obtained to be 2.40eV for As2S3 and 1.81 eV for As2Se3. The band gap was found to be independent of angle of deposition. DC conductivity of the films was very low. The refractive index and extinction coefficient have been calculated using the transmission spectr
Sb2S3 thin films were deposited by thermal evaporation method with oblique angle deposition techniqu...
The influence of thermal annealing on the structure and optical properties of antimony trisulfide (S...
Photo-oxidation of arsenic trisulfide is the process whereby the surface of As2S3 glass is chemicall...
This paper describes the processes of preparing solutions of binary vitreous semiconductor materials...
The influence of the columnar microstructure on the photoinduced scalar and vector effects in obliqu...
As2S3 and As2Se3 chalcogenide glasses doped with cadmium were synthesized in quartz ampoules. Thin c...
The optical properties of as-deposited and illuminated till saturation As2S3 films with amorphous an...
In this paper we report results from studying changes in the optical properties of thin vacuum depos...
AbstractWe obtained amorphous thin films by evaporation and condensation in three component systems ...
In the present work, we report the effect of Te deposition onto As2Se3 film which affects the optica...
Electrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The therm...
Sb2S3 thin films to be used in optoelectronic applications were produced on glass substrates, via ch...
Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrat...
AbstractSpectral dependence of photostructural transformations on the surface and in the interior of...
Pure and Sm3+ doped amoprhous thin films of Sb2S3 and GeS2-Sb2S3 systems were prepared by thermal co...
Sb2S3 thin films were deposited by thermal evaporation method with oblique angle deposition techniqu...
The influence of thermal annealing on the structure and optical properties of antimony trisulfide (S...
Photo-oxidation of arsenic trisulfide is the process whereby the surface of As2S3 glass is chemicall...
This paper describes the processes of preparing solutions of binary vitreous semiconductor materials...
The influence of the columnar microstructure on the photoinduced scalar and vector effects in obliqu...
As2S3 and As2Se3 chalcogenide glasses doped with cadmium were synthesized in quartz ampoules. Thin c...
The optical properties of as-deposited and illuminated till saturation As2S3 films with amorphous an...
In this paper we report results from studying changes in the optical properties of thin vacuum depos...
AbstractWe obtained amorphous thin films by evaporation and condensation in three component systems ...
In the present work, we report the effect of Te deposition onto As2Se3 film which affects the optica...
Electrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The therm...
Sb2S3 thin films to be used in optoelectronic applications were produced on glass substrates, via ch...
Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrat...
AbstractSpectral dependence of photostructural transformations on the surface and in the interior of...
Pure and Sm3+ doped amoprhous thin films of Sb2S3 and GeS2-Sb2S3 systems were prepared by thermal co...
Sb2S3 thin films were deposited by thermal evaporation method with oblique angle deposition techniqu...
The influence of thermal annealing on the structure and optical properties of antimony trisulfide (S...
Photo-oxidation of arsenic trisulfide is the process whereby the surface of As2S3 glass is chemicall...