IEEE TRANSACTIONS ON ELECTRON DEVICES 1 Quantum Simulation of Nanoscale Surround-Gate MOS Devices

Abstract—Three techniques for the modeling the ef-fect of quantum mechanical exclusion of carriers from ox-ide/semiconductor interfaces are examined, using a cylin-drical MOS device as a test structure to show two-dimensional effects. Classical modeling, but adjust physical device parameters to “effective ” values. Another approach is to perturb the silicon bandstructure near oxide interfaces, as demonstrated by Vande Voorde’s extension of the Van Dort model. A final approach is a macroscopic quantum model, the density gradient method, which has been shown to have excellent matching to more rigorous approaches. The superiority of the density gradient approach is demon-strated for these structures in the two-dimensional regime. Index Terms—Capacitance, MOS devices, Quantum the-ory, Semiconductor device modeling, Silicon, Simulatio